smd type transistors FCX458 features 400 volt v ceo p tot =1watt absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 5v continuous collector current i c 300 ma peak pulse current i cm 1a base current i b 200 ma power dissipation at t amb =25 p tot 2w operating and storage temperature range t j :t stg -55to+150 sales@twtysemi.com 1of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min max unit breakdown voltages v (br)cbo i c =100a 400 v breakdown voltages v ceo(sus) i c =10ma* 400 v breakdown voltages v (br)ebo i e =100a 5 v collector cut-off currents i cbo v cb= 320v 100 na collector cut-off currents i ces v ce =320v 100 na emitter cut-off current iebo v eb =4v 100 na i c =20ma, i b =2ma* 0.2 v i c =50ma, i b =6ma* 0.5 v v be(sat) i c =50ma, i b =5ma* 0.9 v base-emitter turn on voltage v be(on) i c =50ma, v ce =10v* 0.9 v i c =1ma, v ce =10v 100 i c =50ma, v ce =10v* 100 300 i c =100ma, v ce =10v* 15 transition frequency f t i c =10ma, v ce =20v,f=20mhz 50 mhz collector-base breakdown voltage c obo v cb =20v, f=1mhz 5 pf t on i c =50ma, v cc =100v ns t off i b1 =5ma, i b2 =-10ma ns * measured under pulsed conditions. pulse width=300s. duty cycle 2% 135 typical 2260 typical emitter saturation voltages v ce(sat) switching times h fe static forward current transfer ratio marking marking n58 sales@twtysemi.com 2of 2 http://www.twtysemi.com smd type transistors FCX458 smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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